| 摘要 |
<p>PURPOSE:To simplify the processings by providing an infrared ray irradiation source at the upward of substrate, placing a semiconductor element attracted by a collet which allows the infrared ray to transmit through it on the die pad part of substrate, positioning it with a reflected light beam and thereby depositing an element to the pad through melting of it with intensified infrared ray. CONSTITUTION:A ceramic substrate 1 is placed on a support 11. Then, a semicondutor element 2 is vacuum-attracted by a collet 18 and it is moved to the upward of die pad of substrate 1. The collet 18 is then moved downward and the bump 2a of the element 2 is placed slightly in contact with the die pad. An optical inspection apparatus 19 is positioned just under an infrared ray irradiation source 17 and thereby the infrared ray is irradiated. The infrared ray passes through the collet 18 and is partly reflected by an element 2 and partly by the die pad of substrate 1. A pair of reflected light beams are extracted by a half-mirror of the optical inspection apparatus 19 and it is then observed by an infrared ray microscope 20 for the positioning of element 2. Finally, the infrared ray is intensified, thereby the bump 2a melts and the bonding thus completes.</p> |
