Photoconductive device

摘要

A photoconductive device comprises a substrate for the photoconductive element, an interface layer made of an amorphous material containing at least silicon atoms and nitrogen atoms as atoms involved in the structure, a rectifier layer made of an amorphous material, containing atoms (A) belonging to Group III or to Group V of the Periodic System as atoms involved in the structure in a matrix of silicon atoms and an amorphous layer which exhibits photoconductivity and is made of an amorphous material which contains at least one representative of hydrogen atoms or halogen atoms as atoms involved in the structure in a matrix of silicon atoms. The rectifier layer has a layer thickness (t) of 3 nm to less than 0.3 nm and the content C(A) of the atoms contained in the rectifier layer is 30 atomic ppm or more or the thickness (t) is 3 nm or more and the content C(A) is from 30 atomic ppm to less than 100 atomic ppm.