| 摘要 |
PURPOSE:To provide the semiconductor device, wherein equivalent resistance value is not changed even though the potential polarities at both ends of a feedback resistor are changed and which includes an element whose circuit characteristics can be adjusted. CONSTITUTION:A P type region 10 is provided in an N type semiconductor substrate 9. A pair of high concentration N type regions 11 and 11' are provided in said P type region 10 with an interval being provided. Contact holes 13 and 13' are for taking out electrodes are provided in an insulating film 12, and metallic regions 14 and 14' for measurement are provided, respectively. A terminal D of a pair of Zener diodes D1 and D2 is made to correspond to the metallic region 14 for measurement, a terminal B thereof is made to correspond to the P type region 10, and a terminal C thereof is made to correspond to the metallic region 14' for measurement. In this way, even though the polarities are changed with respect to the part across the terminal D and C, about 6V of the withstand voltage in the reverse direction is generated at the Zener diodes D1 and D2. In order to further increase the withstand voltage across th terminals D and C, a pair of the diodes between the terminals D and C are connected in series. |
