发明名称 |
ELECTRODE STRUCTURE FOR A SEMICONDUCTOR DEVICE |
摘要 |
<p>An electrode structure for use in semiconductor devices comprising: a semiconductive layer; a conductive layer disposed on one surface of the semiconductive layer; first regions which intervene between the layers and serve as passages for transmitting minority carriers from the semiconductive layer to the conductive layer; and second regions which intervene between the layers and serve as passages for conveying majority carriers between the semiconductive layer and conductive layer, the first and second regions being selectively formed on the semiconductive layer so as to be adjacent to one another.</p> |
申请公布号 |
CA1150417(A) |
申请公布日期 |
1983.07.19 |
申请号 |
CA19800347000 |
申请日期 |
1980.03.05 |
申请人 |
NIPPON TELEGRAPH & TELEPHONE PUBLIC CORPORATION |
发明人 |
AMEMIYA, YOSHIHITO;SUGETA, TAKAYUKI;MIZUSHIMA, YOSHIHIKO |
分类号 |
H01L23/482;H01L29/08;H01L29/45;H01L29/47;H01L29/861;H01L29/868;(IPC1-7):H01L29/44 |
主分类号 |
H01L23/482 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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