| 摘要 |
PURPOSE:To improve the yield rate of production, to microscopically form the isolation width between wirings and electrodes as well as to simplify the manufacture of the high density conductive wiring for the titled semiconductor device by a method wherein the stepping on the surface is eliminated and the type of coating and the disconnection of the insulating film to be formed thereon is improved. CONSTITUTION:A V-shaped groove 19 is formed by performing an ethcing on a part of Si films 18 and 18', and the polycrystalline Si layer 15 for gate elecctrode and the Si film 18 for wiring are isolated. Then, the exposed surface of the polycrystalline Si layer 15 and the Si film 18 are flattened by dissolving an Mo mask in the mixed solution of H2SO4 and H2O2 and also by performing a lift-off. The above is formed into a conductive layer having an N type conductivity by injecting an element from above said exposed surface, and, at the same time, the region which is isolated by the V-shpaed groove 19 on the main surface of the substrate 2 is formed into N type conductive regions 6 and 6'. Subsequently, a heat treatment is preformed, the element which was doped on the Si film 18 is diffused on the main surface of the Si substrate 2, and the N type conductive region 6 for source and the N type conductive region 6' for drain are formed. Then, an insulating film 20 is deposited on the whole surface of the substrate having a gate electrode 5 and wirings 7 and 9 by performing a thermal decomposition method, a sputtering method or an ECR type plasma deposition method, and the V- shaped groove is buried, thereby enabling to obtain a flat surface of the SiO2 film 20 without the V-shaped groove. |
