发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To utilize the first and second interconnection layers for interconnections in a block, without decreasing the utilization efficiency of multilayer interconnection, by constituting the individual internal interconnections in the cell block by a double- layer structure. CONSTITUTION:The second-layer interconnection parts are wired so that the interconnection parts are functioned as passing channels in a block. Of these, the interconnection parts 3a pass in the block as straight lines. The interconnection parts 3b and 3c are arranged in a shape so that the edges of interconnection parts 2, which constitute the functions of block circuits, are detoured by the parts 3b and 3c. The other interconnection parts are formed in a shape so that the parts go through the first interconnection layer 8, which is not used for the internal interconnection, by way of through holes 7. The interconnection parts are set in one of the above described shapes. Especially, with the interconnection parts 3a, the number of the passing channels in the block can be made maximum. From the viewpoint of the wiring design, the interconnection part 3a can be handled as a virtual wiring region. This is an advantage. Namely, since the first and second interconnection layers can be used in the internal interconnection in the block, the integration density in each block can be readily increased. Thus the utilization efficiency of the second interconnection layer can be remarkably enhanced.
申请公布号 JPS62274638(A) 申请公布日期 1987.11.28
申请号 JP19860118753 申请日期 1986.05.22
申请人 NEC CORP 发明人 FUTAMI HARUJI
分类号 H01L21/3205;H01L21/82;H01L21/822;H01L23/52;H01L27/04;H01L27/118 主分类号 H01L21/3205
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