| 摘要 |
PURPOSE:To obtain the titled body having a very small dark attenuation of the electrostatic charge potential by constituting a photoconductive layer from a semiconductor comprising an amorphous silicon contg. hydrogen atom as a main component, and by constituting a surface layer from a dried curing material of a solution contg. at least one kind of an org. titanium compd. CONSTITUTION:The photoconductive layer composed of the amorphous silicon is coated on a conductive substrate, and the surface layer is laminated on the photoconductive layer. The dried curing material of the solution contg. at least one kind of the org. titanium compd. is used as the surface layer. The p-type semiconductor contg. the amorphous silicon as the main component, and boron atom as an impurity is used as the photoconductive layer. The further preferable org. titanium compd. is a titanium complex and titanium alkoxide. The org. titanium compd. is preferably exemplified diisopropoxytitanium bis(acetyl acetonate), etc. Thus, the high mechanical strength, the high durability, the high heat-resisting property and the high photosensitivity of the titled body are maintained, and the high electric charge holding power of the titled body is obtd., without being affected by the surroundings of an outside and the number of using, thereby obtaining the picture image having excellent quality. |
