| 摘要 |
PURPOSE:To obtain homogeneous silicon film by using the plasma processing with sulphur hexafluoride gas as deposite chamber processing method before formation of amorphous silicon film. CONSTITUTION:As an amorphous silicon (a-Si) deposite chamber processing method as the first process for formation of a-Si film, the plasma processing by sulphur hexafluoride is used. For example, after the plasma processing for 15min with the sulphur hexafluoride gas in the flow rate of 100 s c cm. the cyane gas of 40 c s cm and hydrogen gas of 160 s cm are supplied, and a hydrogenated a-Si is deposited for 60min with RF power of 50W. At this time optical conductivity of such a-Si is maximum of 1X10<-5>etamutau, minimum of 5X10<-6>etamutau showing little fluctuation. |
