发明名称 CIRCUITO DE COMPUTO RAPIDO POR ELEMENTOS BIESTABLES
摘要 <p>1,078,406. Semi-conductor circuits. COMMISSARIAT A L'ENERGIE ATOMIQUE. March 3, 1965 [March 19, 1964], No. 9150/65. Heading H3T. [Also in Division G4] Input pulses pass through a triggering device 8 to switch bi-stable elements 34 1 -34 5 in cumulative succession from one stable state to the other, and when all the bi-stable elements have changed over the triggering device 8 is switched to reverse the polarity of its output, whereby input pulses restore the bi-stable elements in the same cumulative succession. As shown, the bi-stable elements are tunnel diodes each of which biases the succeeding one so that only a biased tunnel diode switches. When all tunnel diodes have assumed the same condition transistor 6 is switched to switch Goto circuit 8, so reversing the polarity of its output pulses. The single tunnel diodes may be replaced by Goto circuits. The transistor 6 may be replaced by a resistor (Fig. 7, not shown).</p>
申请公布号 ES310189(A1) 申请公布日期 1965.12.16
申请号 ES19890003101 申请日期 1965.03.06
申请人 COMMISSARIAT R L'ENERGIE ATOMIQUE 发明人
分类号 H03K3/315;H03K21/02;H03K23/00;H03K23/80;(IPC1-7):H03K21/02 主分类号 H03K3/315
代理机构 代理人
主权项
地址