| 摘要 |
PURPOSE:To execute continuous development in constant conditions in developing a resist on a wafer with a spray, by holding a developing soln. at a temperature not above room temp. in advance, and spraying this cooled soln. on the resist on the wafer. CONSTITUTION:A wafer is fixed to a rotary stand installed in a developing chamber connected with a developing soln. feeder and an exhauster, and the wafer is rotated. The developing soln. is held at 0 deg.C- room temp. in advance, and sprayed on a resist on the wafer to develop it, and the chamber is exhausted in reduced pressure. At that time, temp. of the resist is lowered with the evaporation heat of the soln., necessary developing time is extended, and unevenness in development is caused. In this case, when the soln. is cooled at 10 deg.C, the temp. of the resist is kept at 7-10 deg.C after spraying, and necessary developing time becomes 30sec, permitting uniform spray development to be executed continuously. |
