| 摘要 |
PURPOSE:To increase the capacitance of a capacitor for holding voltage by using an insulating film having a high dielectric constant. CONSTITUTION:The capacitor for holding voltage is formed in capacitance between the drain electrode pad of the thin-film transistor and a gate line before one line. The drain electrode pad 19 and the gate line 17 before one line overlap, and the insulating film held between both functions as the dielectric film of the capacitor. Even when one thin-film transistor is shaped into a region, beams are interrupted and display is darkened when the occupying area of the thin-film transistor is reduced as much as possible. Accordingly, both the gate line and a source line are formed as thin lines as much as possible. |
