| 摘要 |
PURPOSE:To obtain the output signals of large amplitude without requiring a reverse conduction type diffusion layer for storing charges-that is, without being limited by electrostatic capacitance in the diffusion layer, and to simplify the peripheral circuit of the transfer element by detecting the quantity of charges being transferred as the quantity of currents of a junction type transistor formed at the position of the semicondutor substrate of an output end. CONSTITUTION:Since amplifying currents flow into the current amplifying transistor d through a load resistor R2 from vias voltage VDD, the potential of the gate 15 of output FET (e) changes in response to the quantity of said amplified currents, the quantity of currents flowing through a source 13 from a drain 14 to which positive predetermined voltage VDD is applied is controlled and voltage between the load resistor R2 corresponding to the quantity of currents is extracted as output signals Vout, and the change of the amplified currents of the current amplifying transistor (d) corresponding to the quantity of charges being transferred from a CCD section (a) is detected by the output FET (e). |
