| 摘要 |
<p>PURPOSE:To simplify structure, and to isolate a light-emitting body and a light- receiving body electrically and positively by using the forming substrate of each semiconductor in common and employing said substrate as a space holder for the light-emitting body and the light-receiving body because both the light-emitting body and the light-receiving body because both the light-emitting body and the light-receiving body are shaped by the nonsingle crystal semiconductors. CONSTITUTION:When forward voltage is applied to the amorphous semiconductor layers 15 through external lead wires 17, 18, light is emitted, and light transmits a transparent electrode 14 and the substrate 11 and enters the light-receiving body 13. The transparent electrode 19 and outer surface electrode 21 of the light-receiving body are severally an indium-tin oxide thin-film and an aluminum thin-film, and the amorphous semiconductor layers 20 are each P type, I type and N type amorphous silicon germanium (a-SixGe1-x:H) layers 20a, 20b, 20c. Photocurrents generated in the amorphous semiconductor layer 13 are extracted through external lead wires 22, 23 when light from the light-emitting body 12 enters the layer 13 because the amorphous semiconductor layers 20 obtained in this manner have photosensitivity characteristics of which approximately 6,800Angstrom wavelength is peak intensity.</p> |
