发明名称 Memory protection arrangement
摘要 A memory protection arrangement particularly suitable for use with battery backed-up CMOS RAMs. The voltage level of power to the CMOS RAMs is referenced to the logic supply to eliminate latch-up and low voltage problems and to relax the tolerances required in power supply circuits. In addition, the master chip enable for all CMOS RAMs is latched rather than providing a separate latch for individual chip enable. Furthermore, the state of the logic supply is latched at the beginning of each memory cycle to prevent disabling of the CMOS RAMs during a cycle. An additional voltage sensor controls the enable of a buffer for each chip enable.
申请公布号 US4388706(A) 申请公布日期 1983.06.14
申请号 US19800211937 申请日期 1980.12.01
申请人 GENERAL ELECTRIC COMPANY 发明人 BUTLER, CLYDE R.
分类号 G11C5/14;(IPC1-7):G11C11/34 主分类号 G11C5/14
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