| 摘要 |
PURPOSE:To shorten the channel length by coupling between a gate electrode and a source electrode with a high impurity density layer, thereby reducing a source side parasitic resistance ZS and controlling a current with a depletion layer expanding at the periphery of the angles of a buried layer and a gate electrode. CONSTITUTION:The first high density impurity layer 8, the second low impurity density layer 9 having the same conductive type as the layer 8, the third high impurity density layer 10 having the same conductive type as the layer 8, and the fourth layer 11 having the reverse conductive type to the first layer are formed on a semi-insulating substrate 7. A gate electrode 12 is formed by digging the first layer, and the depletion layer 13 by the gate electrode 12 reaches the depletion layer 14 around a P-N junction formed with the fourth layer 11 when a gate voltage is zero. The currents which flow between a drain electrode 15 and a source electrode 16 is controlled by the layers 13, 14. |
