| 摘要 |
PURPOSE:To quickly obtain a high quality nitride film by generating plasma by applying a high frequency power after providing an Si substrate to the one of the parallel electrodes and by using a DC negative bias due to a difference of mobilities between ion and electron. CONSTITUTION:An N2 is introduced 20 into a chamber 12, a high frequency voltage is applied from a high frequency power supply 19 to the upper electrode 13 during exhaustion 21 in order to realize grow discharge. A DC negative bias to be applied to the Si substrate 17 on the lower electrode 14 is changed by adjusting the matching boxes 16, 16'. While a substrate temperature is kept at 700-800 deg.C, film forming rate is accelerated and thermal adverse effect is avoided. According to this constitution, charge up which causes dielectric breakdown can be prevented and a nitride film having high film quality can be formed quickly. |
