发明名称 Monolithically integrated buffer inverter
摘要 To provide optimum drive for a push-pull output stage consisting of a depletion-type output transistor (Q10) and an enhancement-type output transistor (Q11'), a preamplifier stage (V1) is provided which displaces or expands the swing of the input signal between the potential of the circuit zero point and that of the operating voltage (VD) in such a manner that the depletion-type output transistor (Q10) is reliably cut off. At the output of the preamplifier stage (V1), a driver stage (T1, T2), which provides both for capacitance matching and further improves the signal swing supplied by the preamplifier stage (V1), is provided for each output transistor (Q10, Q11'). The preamplifier stage (V1) contains an enhancement load inverter (EI) and a depletion load inverter (DI1), the two driver stages (T1, T2) in each case consisting of a depletion load inverter (DI2, DI3). <IMAGE>
申请公布号 DE3146485(A1) 申请公布日期 1983.06.01
申请号 DE19813146485 申请日期 1981.11.24
申请人 DEUTSCHE ITT INDUSTRIES GMBH 发明人 GOLLINGER,WOLFGANG,DIPL.-ING.
分类号 H03K19/017;H03K19/0185;H03K19/0944;(IPC1-7):H03K19/01;H03K5/02;H03K17/68 主分类号 H03K19/017
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