| 摘要 |
PURPOSE:To form electrodes having good bondability by heat treating a molybdenum film to preferably etch with an etchant heretofore used and to prevent an aluminum from spiking. CONSTITUTION:The steps of forming at least a molybdenum 2 on a semiconductor substrate 1, heat treating the film 2, forming a titanium film 3 on the film 2, forming a metal film 4 on the film 3, and etching the films 4, 3, 2 are provided. After the film 2 is formed, the film 2 is heat treated for several tens time at 400-500 deg.C. Thus, even if the film 3 is covered in the later step, an alloy layer of the molybdenum and the titanium is eliminated to etch it with a conventional etchant. |
