| 摘要 |
An exposed surface of a semiconductor substrate with an integrated injection logic semiconductor region having a first conductivity injector region of which one surface is exposed, a first conductivity type base region of which part of the surface is exposed, and a second conductivity type collector region of which one surface is exposed and the remaining surfaces are surrounded by the base region, is covered with SiO2. Contact holes are holed in the SiO2 layer at the locations facing the injector regions, the base regions and the collector region. Through the contact holes, first conductivity type ions are injected into the semiproduct of the semiconductor device. As a result, the surface impurity concentrations of the injector region, the base region and the collector region are 1x1019/cm3 or more. Interconnection electrodes of, for example, MoSi2 make ohmic contact with the respective regions.
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