发明名称 ANNEALING BY ELECTRON BEAM
摘要 PURPOSE:To prevent increase in the amount of out-of-focus electron beam by a method wherein a deceleration magnetic field is provided in the vicinity of the surface of the sample to be processed on an electron beam path, an electron beam is radiated from a highly accelerating electron field, decelerated by a deceleration field, and incidented into the surface of the sample. CONSTITUTION:The voltage of -60kV is applied to an electron gun 2, the voltage of -40-55kV is applied to the sample to be processed, and zero V is applied to a grid mesh 5. As the electron beam 7 is radiated from the electron gun 2 at high acceleration voltage by applying voltage to each part as above-mentioned, the electron beam progresses toward the surface of the sample 6 without having an enlarged beam spot. When the electron beam 7 reaches the point in the vicinity of the surface of the sample 6, the electronic field generated by providing the grid mesh 5 of the potential zero V function for the electron beam 7 as a deceleration electric field, said electron beam 7 is decelerated and it is incidented into the surface of the sample 7. As a result, the depth of annealing on the surface of the sample can be shallowly formed.
申请公布号 JPS5891643(A) 申请公布日期 1983.05.31
申请号 JP19810190414 申请日期 1981.11.26
申请人 FUJITSU KK 发明人 OSADA TOSHIHIKO
分类号 H01L21/263;H01J37/30;H01L21/322;(IPC1-7):01L21/322 主分类号 H01L21/263
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