| 摘要 |
PURPOSE:To stabilize conditions, such as plasma density and the like, in such a treatment as activation of wafers, by employing such a simple arrangement that a metal is used for at least the inner walls of a plasma-producing chamber and a plasma treatment chamber, and a microwave waveguide is directly connected to the plasma- producing chamber. CONSTITUTION:A microwave of 2.45GHz frequency oscillated by a magnetron 11 is led into a plasma-producing chamber 13 through a wave guide 12. The opening of the plasma-producing chamber 13 to the waveguide 12 is hermetically sealed with an alumina porcelain plate 14, and a gas introducing pipe 15 is provided on the side of the upper part of the plasma-producing chamber 13. The plasma-producing chamber 13 is connected to a plasma treatment chamber 16, and a microwave-shielding plate 17 is placed as a partition wall between both the chambers. In addition, an exhaust pipe 18 is disposed at the lower part of the plasma treatment chamber. Moreover, an object 19 to be processed is placed on the extension of the longitudinal axis of the plasma- producing chamber 13 extending in the direction coinciding with the direction of the microwave incident on the plasma-producing chamber 13. The plasma-producing chamber 13, plasma treatment chamber 16, microwave shielding plate 17, gas-introducing pipe 15 and exhaust pipe 18 are formed from aluminum and subjected to oxide film treatment. |
