| 摘要 |
PURPOSE:To obtain a semiconductor device of small size and high moisture resistance by connecting the electrodes of a semiconductor element to metal leads integrated with a flexible film and forming deposited layers which include the element on upper and lower surfaces through organic or inorganic material layers. CONSTITUTION:The electrode lead of polyimide film 4 is thermally press-bonded to the projected electrode 2 of a semiconductor element 1. Epoxy resins or glasses 12, 12' are placed on both sides of the element 1, are pressurized as designated by 11, and are heated, thereby enclosing the element. The material 12 may be liquid or a plate which should be as thin as possible. Subsequently, with masks 20, 20', a layer 22 which is made of Cr, Ti or its oxide having corrosion resistance and high density is deposited as designated by 21, 21'. In this structure, since the organic or inorganic material is covered with the dense deposited layer, even if the organic or inorganic film is extremely thin, it can prevent moisture from invading, and when the thickness is larger than 1mum, an electric insulation between the element and the deposited layer can be performed. When a semiconductor device is isolated from the film 3 and electrode leads 4 are molded, a semiconductor device which has small size and high moisture resistance can be completed. |
