| 摘要 |
PURPOSE:To obtain an element having high drain withstand voltage by forming a field alleviating region at the intermediate between the source and drain regions when source and drain regions are formed in a semiconductor substrate as an IGFET, and forming an offset gate region while disposing the region under the gate oxidized film. CONSTITUTION:With an oxidized film of the prescribed shape as a mask P is diffused in a P type Si substrate 9, an N type source region 10, a drain region 11 and a field alleviating region 17 disposed between the regions 10 and 11 are formed. Then, the mask of the oxidized film which becomes unnecessary is removed, a gate oxidized film 16 is covered between the regions 10 and 11, and a gate electrode 13 which is made of P<+> type Si is mounted on the film 16 in the vicinity of the region 10 side. Thereafter, with the electrode 13 as a mask P ions are implanted to form offset gate regions 12 which are disposed at both sides of the region 17, is heat treated and is activated. Subsequently, a hole is opened at the regions 10, 11, and source and drain electrodes 14, 15 are respectively covered. |
