发明名称 |
METHOD OF FORMING EPITAXIAL TUNNELS IN CRYSTALLINE STRUCTURES |
摘要 |
Epitaxial tunnels may be formed in crystalline bodies of crystalline materials by growth of the material on a substrate having two intersecting crystallographic planes that exhibit rapid epitaxial growth and by maintaining the growth until the structure forming along those planes closes, thereby producing a tunnel. P-n junction structures can be made in semiconductor devices by appropriate techniques. |
申请公布号 |
DE3062651(D1) |
申请公布日期 |
1983.05.19 |
申请号 |
DE19803062651 |
申请日期 |
1980.01.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MARINACE, JOHN CARTER |
分类号 |
C30B25/18;C30B29/40;G01D15/18;H01L21/20;H01L21/205;H01L23/473;H01L27/14;H01L29/04;H01L29/06;H01L31/00;H01L31/0264;H01L33/20;(IPC1-7):30B23/04;01L21/20;30B25/04 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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