| 摘要 |
PURPOSE:To use only an external terminal to measure the dielectric strength of each part in a chip, by measuring the dielectric strength while making a thyristor switch part conductive in the semiconductor switch where the thyristor switch part and a driving part are integrated. CONSTITUTION:In the measurement of the dielectric strength of diodes DN1 and DN'2, a dielectric strength measuring voltage -VH is applied across both terminals 1(H) and 2(V) of a switch circuit 100, and the H-level pulse of a relay signal CRY1 is given to changeover switches Sw1-1, Sw1-2, and Sw1-3 of a switching circuit 60 from contacts (a) to contacts (b) temporarily, and the switch circuit 100 is made conductive to set potentials of switch terminals 1(H) and 2(V) to the applied voltage -VH together, and in this state, a leakage current flowed between the side of switch terminals 1 and 2 and the side of input terminals 3, 4, and 5 is measured. |
