| 摘要 |
PURPOSE:To provide a method of controlling the value of a collision ionization coefficient ratio by obtaining the ratio in an artificially constructed substance structure. CONSTITUTION:Semiconductors A and B to satisfy xA<xB, xA+EgA<xB+ EgB, where xA represents electron affinity of the semiconductor B, EgA forbidden band width ot the semiconductor A, XB electron affinity of the semicodutor B and EgB forbidden band width of the semiconductor B are laminated, thereby allowing the holes to mainly move in the semiconductor A and the electrons to mainly move in the semiconductor B, and an ionization coefficient ratio can be obtained even if the semiconductors of different types are bonded. Further, at least one of the semiconductors A, B is formed of a mixed crystal which is composed of more than three elements. The value of the ionization coefficient ratio can be controlled by varying the mixed crystal ratio of the semiconductors. The semiconductors of the preferable combination to be used are a combination of InAs and Ga1-xAxSb, and further combinations of In1-xGasAs and InP, In1-xGaxAs1-y and InP, In1-xGaxP and G1-yAlyAs. |
