| 摘要 |
PURPOSE:To eliminate the danger of the generation of undesirable etching by forming a high-concentration region to the source region of an active layer and directly connecting the high-concentation region and an electrode formed to the back of a substrate by a metallic connecting conductor. CONSTITUTION:A concave section 14 reaching the N<+> region 12 of the back of the semi-insulating substrate 1 is shaped at a position corresponding to the N<+> region 12, and an evaporation layer 7, onto which an AuGe alloy layer and an Au layer are laminated, and an Au plated layer 8 are formed onto the back of the substrate 1 containing the bottom 15 and inner wall surface of the concave section 14. Since the source region 12 is shaped as a high concentration region, the region 12 may directly be connected to the back electrode 9, and etching from the back of the substrate for forming the conducting path may be executed up to the region 12, thus resulting in no generation of undesirable etching which has been seen in conventional structure. |
