发明名称 Verfahren zum Erhoehen der maximalen Sperrspannung einer ebenen, in einem von 90 Grad abweichenden Winkel die Oberflaeche tretenden pn-UEbergangsflaeche eines Halbleiterbauelements
摘要 1,100,846. Semi-conductor devices. SIEMENS-SCHUCKERTWERKE A.G. 26 April, 1965 [25 April, 1964], No. 17573/65. Heading HlK. In a semi-conductor device having a plane junction meeting the surface at an angle other than 90 degrees, the surface adjacent to the junction contacts a substance which produces a surface charge such that when the junction is reverse biased the maximum field strength at the surface is reduced. A diode produced by diffusing aluminium and gallium into an N-type silicon wafer, ultrasonically machining to produce a bevelled edge, and alloying-in contacts, is placed in a container which may be filled with moist nitrogen, dry nitrogen or ozone to produce a strong positive, weak positive or strong negative surface charge respectively. If the more lightly doped region is N-type and its bevelled surface makes an obtuse angle with the junction, the surface charge should be strongly negative, Fig. 3 (not shown). If the surface of this region makes an acute angle with the junction and has an N-type surface region near the junction, then the maximum field strength occurs near the N-type region and the surface charge should therefore be weakly positive to reduce the field at this point, Fig. 5 (not shown). As shown, Fig. 8, an SCR is produced by diffusing both aluminium and gallium into an N-type silicon wafer 83 to produce relatively heavily doped P-type regions 84 and 85. Aluminium wafer 86, gold-boron wafer 87 and gold-antimony ring 89 are alloyed to the surfaces to form the collector, gate and emitter contacts respectively. The edge of the wafer is bevelled and a gold-antimony ring 90 is alloyed to region 83. The device is mounted on a metal carrier disc 92. A ring of lacquer 93 producing a strong negative surface charge is applied to region 83 at the emergence of junction 81 and a ring of lacquer 94 producing a weak positive surface charge is applied to region 83 adjacent to N-type region 91. The substance used to produce the surface charges may be a silicone lacquer or a resin. Certain commercial products are mentioned, alizarin being added to some to modify the charge produced. Reference has been directed by the Comptroller to Specification 968,106.
申请公布号 DE1292756(B) 申请公布日期 1969.04.17
申请号 DE1964S090780 申请日期 1964.04.25
申请人 SIEMENS AG 发明人 JAENTSCH;OTTOMAR DR.
分类号 H01L23/31;H01L29/06;(IPC1-7):01L1/10 主分类号 H01L23/31
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