| 摘要 |
PURPOSE:To curtail sharply time necessary for trial manufacture of an LSI when a metal wiring pattern of the semiconductor device is to be formed by a method wherein to supplement the small quantity to be processed per unit hour of an electron beam drawing device, the part being able to be processed with an optically exposuring device is processed with the device thereof, and the remaining part is processed with the electron beam drawing device. CONSTITUTION:An optically exposing process 3 is performed at first using a mask to a semiconductor substrate finished with a metal film evaporating process 1 and a metal film photo resist process 2. Then a directly drawing process 4 is performed using an electron beam drawing device to a metal wiring pattern region excluding the region performed with the optically exposuring process 3 thereof, and then a metal film obtained on the substrate finished with exposure using both the devices is processed with an etching process 5 to obtain the desired metal wiring. Accordingly the number of sheets to be processed per unit hour by the electron beam drawing device is enhanced sharply, and is made as suitable for numerous kinds small quantity production. |
