| 摘要 |
PURPOSE:To form a flat insulation layer having high insulation resistance between electronic elements, by a method wherein Si resin including sil-sesquioxane of 40% or more is treated at a temperature of 450 deg.C or more within the atmosphere including O2. CONSTITUTION:In silicon resin having organic group R and functional group X, T unit (sil-sesquioxane) of 60% in which X is OX group, Q unit (SiX4) of 30% and D unit (R2SiX2) of 10% are added, thereby resin is obtained in excellent heat-resistant, anti-abrasion and adhesive property. If this is treated at high temperature in O2, the organic group R in the Si resin is cracked into CO2 and bridging polymerization reaction progresses thereby SiO2 which is flat and has high insulation resistance is obtained. If SiO2 is obtained by heating at one process, SiC may be produced. At roughened surface on the substrate, formation of the resin layer and decomposition threof are repeated and good insulation layer is effectively formed. Thereby IC circuit can be formed in three dimensions. |
