| 摘要 |
In accordance with the present invention, a laser device is formed on an integrated circuit substrate, such as a silicon chip by sandwiching a thin-film amorphous semiconductor between reflective electrodes. The upper electrode is made only partially reflective so that, when an operating potential is applied between the electrodes, a stimulated emission of light energy in the infrared range is observed and this emission occurs through the upper electrode. To form a light amplifier, the lower reflecting electrode is omitted, so that the amorphous semiconductor and the substrate form a heterojunction which has low infrared reflectivity. In operating the amplifier, a potential is applied between the upper electrode and the substrate to control amplification. Incident radiation passes through the upper electrode and into the amorphous semiconductor and substrate and, in the process, is amplified in accordance with the value of the applied potential. This permits the incident radiation to be modulated in accordance with the applied potential. In a preferred embodiment incorporating the invention, at least one laser and an amplifier are incorporated on the same substrate as electronic circuits handling information signals. The laser is a source of light radiation and the amplifier is controlled with a voltage signal from the electronics to modulate laser radiation. Radiation is coupled between the laser and the amplifier and also out of the amplifier by means of optical wave guides which are fabricated on the substrate. The modulated radiation in the wave guide from the amplifier can then be provided directly to a fiber optic "transmission line".
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