| 摘要 |
PURPOSE:To easily carry out a step of aligning a wiring layer in a substrate and a wiring layer on the substrate, by providing a first wiring layer formed on a semiconductor substrate and having a conductivity type opposite to that of the substrate, and a second wiring layer crossing the first wiring layer through an insulating film. CONSTITUTION:An insulating film 102 is formed on an N type silicon substrate 101 and then selectively opened to determine an active region 103 and a wiring area 104 of an FET. Moreover, an SiO2 film 105 is deposited on the exposed regions 103, 104 of the substrate 101, and a polycrystalline silicon film 106 is formed on the whole surfaces of the insulating films 102, 105. Then, the polycrystalline silicon wiring layer 106 is selectively etched to determine a wiring layer 108. The wiring layer 108 crosses the wiring area 104 on the latter through the insulating film 105 and etched so that the width of the wiring layer is narrowed at a part thereof crossing the wiring area 104, i.e., a part of the semiconductor substrate 101 within the wiring area 104 is exposed. |
