| 摘要 |
PURPOSE:To form roundness on the corner parts of an SiO2 layer of the ground and an Al wiring layer when a contact pattern and a wiring pattern are to be formed in a semiconductor device by a method wherein postbaking of a photo resist is designed, and the ion milling method is adopted for etching. CONSTITUTION:The SiO2 layer 12 is formed on a silicon substrate 11, the photo resist film 13 is applied thereon, exposure and development are performed thereto, and an opening is formed on the contact part. Postbaking is performed sufficiently up to form roundness at the pattern edge 14. Then contact patterning is performed according to the ion milling method using the film 13 as the mask. At the stage when the surface of the substrate 11 at the contact part is exposed, the sectional shape of the edge 14 is transcribed to the pattern edge 15 of the layer 12 in condition as it is. Accordingly when the pattern edge of the photo resist 13 is rounded sufficiently at the corner, the shape of the opening part being rounded at the corner can be obtained also in the SiO2 layer of the ground, and disconnection of the Al wiring layer 16 can be prevented. |
