| 摘要 |
PURPOSE:To improve step coverage by a method wherein a recessed section is provided by anisotropic etching and a contact hole is provided at the region by isotropic etching. CONSTITUTION:Photoresist 6' is applied on a plasma nitride film 3' and a desired section is exposed to provide a contact opening section. Etching is applied along the opening section by anisotropic etching by using the resist 6' as a mask. Next, etching is done by isotropic etching by using the resist 6' as a mask. Then a contact hole 4' is opened and etching is done in the side direction to become overhang against the resist 6'. Then, taper etching improving step coverage by peeling off the resist 6' is applied. The aluminum 5' on the second layer wiring is vaporized and wiring is completed by forming a wiring layer. |
