| 摘要 |
PURPOSE:To reduce the power source voltage dependency of the difference potential between a logical threshold value and a source potential and to widen the range of a usable power source potential by utilizing the forward voltage of a PN junction diode. CONSTITUTION:The PN junction diode 9 is interposed between the source electrode of a 2nd MOS transistor(TR) 2 and a 2nd voltage source 14 in the direction so as to allow the current to flow. In this case, the logical threshold value is (power source potential)+(forward voltage of PN junction diode 9)+(increment in threshold voltage of the 2nd MOS TR 2). The dependency upon the forward current value of the PN junction diode is small comparatively and an increment in threshold voltage with the back gate voltage of the 2nd MOS TR 2 is about 0.1-0.3<v>, so the logical threshold value has an about +0.5<v>-1.0<v> difference potential to the power source potential. This difference potential does not utilize the difference in the mutual conductance between the MOS TRs, so the power source potential dependency is very small and deviation due to manufacture variance can be suppressed small. |
