| 摘要 |
PURPOSE:To manufacture the MES FET having excellent electrical characteristics, such as a high-frequency characteristic, a high-speed characteristic, dielectric resistance, etc. and high reliability in sperior yield by utilizing oblique ion implantation from both directions while using a gate electrode as a mask. CONSTITUTION:An n type conductive layer 22 is formed onto the surface of a semi- insulating GaAs substrate 21 through epitaxial growth. The gate electrode 23 consisting of a high-melting point metal such as tungsten is shaped onto the surface of the semiconductor substrate through the formation of a resist-pattern by means of photolithography, the evaporation of a gate metal and the lift-off of the unnecessary section. The first ion implantation in the semiconductor substrate is conducted from one oblique direction while employing the resist-pattern 24 shaped through photolithography and the gate electrode 23 as masks, and a first ion implantation region 25 is formed. A second ion implatation is conducted from the opposite oblique direction, and the second ion implantation region 26 is formed. A source region 28 and a drain region 29 are shaped through heat treatment. The resist-pattern 24 is removed, the resist-pattern is molded through photolithography again, the ohmic metal is evaporated, the unncessary section is lifted off, and source-drain electrodes 30, 31 are formed onto the source-drain regions 28, 29. |
