| 摘要 |
PURPOSE:To improve the resolving power in a light-exposure system and permit a photoresist pattern to be minuter, by filling between a mask and a photoresist film a substance having a refractive index close to that of the photoresist film as well as fluidity. CONSTITUTION:A semiconductor substrate 1 is provided with an oxide film 2, on which a photoresist film 3 is applied. A mask 4 is constituted by a glass plate 5 provided with a pattern 6. A substance having a refractive index close to that of the photoresist film 3 as well as fluidity is filled between the mask 4 and the photoresist film 3. Since the refractive indexes of the glass and the photoresist film with respect to air are close to each other, the light entering the glass plate 5 of the mask 4 is refracted when entering the glass plate 5 but is not much refracted thereafter and enters the photoresist film 3. Accordingly, a difference in position due to refraction becomes extremely small. As a result, resolving power is improved, and the pattern can be made minuter. |
