| 摘要 |
1,243,890. Epitaxial deposition. SIEMENS A.G. 13 Aug., 1969 [14 Aug., 1968], No. 40381/69. Heading C1A. Epitaxial deposition of an inorganic substance on silicon comprises cleaning a silicon crystal by heating to above 1000‹ C. in an oxidizing atmosphere, causing the deposition of a layer of oxide 20-100 Š thick, followed by annealing the crystal preferably at 1000-1028‹ C. in an atmosphere of hydrogen or a rare gas and hydrogen whereby the oxide layer is removed, leaving a pure silicon surface. The crystal is then maintained in an atmosphere free of oxidizing agents prior to epitaxial deposition of an inorganic substance on the surface. |
