| 摘要 |
PURPOSE:To directly obtain a good quality nitride film without being influenced by a plasma excitation light by a method wherein a gas containing N2 is discharge-dissociated in a discharge chamber resulting in the production of long life time activated N2, and this is transported to a reaction chamber provided at the position isolated from the discharge chamber then being reacted with a heated sample therein. CONSTITUTION:A microwave electric power from a microwave power source 11 is supplied to a wave guide 15 having a short plunger tuner 22 and a water cooling jacket 23 via an isolator 12, a directional coupler 13 and a three pole tuner 14. On the other hand, an exhaust port 19 having a vacuum gauge 28, a trap 20 and a lid 27 are provided to a reaction tube 18 surrounded by heating sources 24, and a discharge tube 16 having a gas inlet 21 is projected to the side opposed to the lid 27 via a transport tube 17 made of quartz then being inserted into the wave guide 15. In this construction, a sample 26 supported by a support made by quartz 25 by put into the reaction tube, and the activated N2 matched in tuners 14 and 22 and generated by a glow discharge in the discharge tube 16 is carried onto the sample 26 resulting in the production of a nitride film. |
