| 摘要 |
PURPOSE:To increase the number of picture elements substantially to improve the picture quality, by using a potential barrier to form the boundary of a photoelectric conversion region, and changing properly a picture element region. CONSTITUTION:The position of a potential barrier is determined by external signals C1-C3 to designate the division state of a photoelectric converting part. The photoelectric converting part becomes (N+1) number of picture elements independent of one another in a certain division state, and the photoelectric charge is cleared through FET switches GC1-GCN+1 by a gate signal CLR. The signal charge from said picture elements is transferred divisionally to charge storing parts RI-J (I=1-N and J=1, 2, and 3) by gate signals STR1- STR3 and is transferred to a charge transfer path CCD by gate signals TRF1- TRF3 and is outputted as a voltage signal from a charge-voltage converting amplifier VA. |
