发明名称 SEMICONDUCTOR SURFACE TREATMENT APPARATUS
摘要 PURPOSE:To enhance film quality and attain high speed treatment by loading and unloading the object to be processed at a time in unit of plural numbers for processing and by processing them at the processor through the movement in the same attitude. CONSTITUTION:Since plurality sheets of wafers transferred by the transfer portion 11 are simultaneously processed as a group consisting of plurality of wafers, a thin film can be formed at a time on the wafer surface with homogeneous quality of film. In addition, since the wafers of a group are being processed, other wafers are sequentially advanced for processing, the wafer processing efficiency is also not lowered. Moreover, the wafers are completely transferred automatically between the transfer portion 11-loader 13-processor 10-unloader 14- transfer portion 12, therefore realizing the automatic processing of the apparatus.
申请公布号 JPS5833828(A) 申请公布日期 1983.02.28
申请号 JP19810131464 申请日期 1981.08.24
申请人 HITACHI SEISAKUSHO KK;HITACHI OUME DENSHI KK 发明人 AKIBA MASAKUNI;NAGATOMO HIROTO;YONEMITSU KAZUHIKO
分类号 H01L21/677;C23C16/54;H01L21/205;H01L21/302;H01L21/3065 主分类号 H01L21/677
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