| 摘要 |
PURPOSE:To improve the eliaility of connecting a wire by disposing the bonding position of a bonding wire from the position of an active layer, thereby increasing the load in case of bonding. CONSTITUTION:P type and N type GaAlAs buried layers 12, 11 are formed on an N type GaAs substrate 10. A GaAs active layer 13 of 2-3mum of width oscillating in laser, a P type GaAlAs layer 14 of a light guide layer and an N type GaAlAs layer 15 and further an N type GaAlAs layer 16, a Zn diffused part 17 are formed in a region which is isolated from other region via the layers 11, 12 to run in strip shape in one direction. Then, an Au wire 26 of 25mum in diameter is subjected to thermal-press-bonding except the active layer 13 running in the strip shape at the center of the chip. |
