| 摘要 |
PURPOSE:To form a high quality silicon thin film by a method wherein an insulator thin film is partially formed on a single crystal semiconductor substrate and after forming a single crystal semiconductor thin film and a polycrystalline semiconductor thin film, energy beams are aimed at the thin films. CONSTITUTION:A silicon nitride film 20 is formed on the surface of a single crystal silicon substrate 10 by a CVD method or the like and unnecessary parts are removed to compose insular structure. A silicon oxide film 30 is formed at the part existing no silicon nitride film 20 by a thermal oxidation method. After removing the film 20, a silicon film is formed through the whole surface. At that time, a single crystal silicon film 41 by epitaxial growth is formed at the part exposing the substrate 10 on the surface and a polycrystalline silicon film 42 is formed at the part existing the film 30. Finally, the film 42 is easily monocrystallized by using the film 41 as seed crystal if laser annealing is applied to the film 42 under appropriate conditions and it becomes possible to form a single crystal silicon thin film on the silicon oxide film. |
