| 摘要 |
PURPOSE:To obtain a semiconductor device which has the first layer wire not etched at a through hole, high yield and high reliability by pretreating a semiconductor substrate with vapor of pretreated solution containing hydrofluoric acid before coating metal on the substrate. CONSTITUTION:The first wiring layer 3 of aluminum is formed through a silicon oxidized film on a silicon substrate 1, a silicon oxidized film 4 is then grown by a vapor growth, and a through hole 5 is opened. Then, it is exposed with the liquid surface of the pretreating solution 6 containing hydrofluoric acid for several seconds to several tens minutes. Thus, the vapor of the hydrofluoric acid cover overall the semiconductor substrate, and a thin layer 6' of the pretreating solution containing hydrofluoric acid is formed on the surface of the substrate. Since the front and back surfaces of the substrate are insulated via air in this treatment, a battery is not formed, and the aluminum 3 of the first layer wiring of the through hole 5 is not almost etched. Accordingly, the second layer aluminum wiring 7 is not stepwisely disconnected, thereby obtaining preferable multilayer wirings. |
