| 摘要 |
PURPOSE:To obtain a photovoltaic element having high photoelectric conversion efficiency by forming by a vacuum deposition method the first transparent conductive film on a semiconductor and forming the second transparent conductive film through a plasma state. CONSTITUTION:An a-Si layer 12 is formed on a stainless steel substrate 11, and the first transparent conductive film 13 is formed by a vacuum deposition method on the layer 12. Then, the second transparent conductive film 14 is formed by an ion plating method on the film 13. Since the surface of the a-Si semiconductor is covered with the first film in the above structure, even if the second film is formed through the plasma, the surface of the semiconductor is not eroded. Accordingly, the boundary state between the semiconductor and the transparent conductive film is good. The transparent conductive film having good transparency can be obtained by suitably selecting the thickness of the film 13 even if the substrate temperature is low. |
