| 摘要 |
PURPOSE:To readily manufacture a semiconducor device and to stabilize the characteristics of the device by forming a pair of impurity layers at the side of a non-single crystal semiconductor, a gate insulator on the siconductor and a gate electrode on the insulator. CONSTITUTION:A non-single crystal semiconductor 20 forming a channel forming region and a mask 21 are formed on a substrate 1. Subsequently, a conductive type semiconductor layer 25 is formed on the substrate 1 or on the semiconductor 20. Then, a field insulator 31 is formed on the layer 25, and the layer 25 and the insulator 31 at the mask 21 and the outer periphery of the mask 21 are removed, thereby forming a pair of impurity regions 29, 30. Thereafter, a gate is formed on the channel forming region. |
