| 摘要 |
PURPOSE:To increase density even when the spaces of bit wires are narrow and a sensing amplifier has a large area by coupling a plurality of the bit wires to one sensing amplifier through a charge transfer section regarding the semiconductor memory storage in form of which a memory cell connected to the bit wires and word wires is mounted and the information of the memory cell is read by means of the sensing amplifier connected to the bit wires. CONSTITUTION:When driving pulses are supplied to a supply wire e in a group consisting of the bit wires 121, 122, 123, the sensing amplifier 152 and the charge transfer section 162, charges in the bit wires 121, 122, 123 are transferred to wells corresponding to transfer electrodes 221b, 222b, 223b. When driving pulses are supplied successively to supply wires d, a, b, c and charges are transferred, the information of the bit wire 123 is sensed to the sensing amplifier 152 first, the information of the bit wire 122 is sensed subsequently, and the information of the bit wire 121 is detected lastly. Information transmitted to the sensing amplifier 152 from any bit wire can easily be discriminated through previous synchronizing by clock signals. |
