| 摘要 |
PURPOSE:To suppress temperature increase of a wafer caused during an ion implantation by taking advantage of a cooling caused by radiations by providing conical or wedge-like metallic projections on at least one of the surface of a wafer holder and the wall surface of a process chamber. CONSTITUTION:Radiations 2 sent from a wafer 1 undergo multiple reflection at the surfaces of many wedge-like projections 4 provided on the surface of a wafer holder 3, and at last, are absorbed by the wafer holder 3. As to a process chamber 11 provided with wedge-like projections, since the time during which a wafer 7 faces to the chamber 11 is considerably longer than the time during which ion beams are applied to the wafer 7, the chamber 11 effectively absorbs radiations sent from the wafer 7. As a result, the ion implantation device has excellent characteristics in terms of both the gas discharge rate in vacuum, and a high cooling rate of the radiation absorbing body itself. |
