| 摘要 |
A semiconductor device including a gate protection circuit in which a N-type or P-type high-concentration impurity semiconductor region is formed under the input terminal such as a bonding pad and is connected to the power supply line or the ground line. Since a distributed capacitance is formed between the bonding pad and the impurity semiconductor region with the silicon oxide film sandwiched therebetween as a dielectric, high-frequency high surge voltage applied to the input bonding pad is readily by-passed from the bonding pad, through the insulating oxide film and the impurity semiconductor region, to the power or ground line, without flowing to other circuits formed on the same substrate, thereby it being possible to securely prevent the circuits on the substrate from being activated erroneously. |
