| 摘要 |
PURPOSE:To obtain a semiconductor device which has high yield, excellent humidity resistance, and less disconnection and shortcircuit in multilayer wires by removing a phosphorus glass film on an oxidized film and partly exposing the oxidized film while maintaining the surface smooth. CONSTITUTION:Field oxidized films 102a, 102b, a gate electrode 104 formed of polycrystalline silicon, a polycrystalline silicon wiring layer 105 and source, drain regions 106, 107 are formed on a P type single crystal silicon substrate 101. Further, oxidized films 108a-108d are formed, and a phosphorus glass film is thickly formed on the overall surface. Subsequently, the glass film is partly retained at 109a-109h, and is removed at the other, thereby partly exposing the films 108a-108d while maintaining the surface smooth. Thereafter, contacting holes are opened, and Al wiring layers 114, 115 are formed. |
